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AT25PE20 Datasheet(PDF) 24 Page - Dialog Semiconductor

Part # AT25PE20
Description  2-Mbit DataFlash-L Page Erase Serial Flash Memory
PDF  64 Pages
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Manufacturer  DIALOG [Dialog Semiconductor]
Direct Link  http://www.dialog-semiconductor.com/
Logo DIALOG - Dialog Semiconductor

AT25PE20 Datasheet(HTML) 24 Page - Dialog Semiconductor

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AT25PE20
DS-25PE20–139C–8/2018
If a sector is programmed or reprogrammed sequentially page by page and the possibility does not exist that there will be
a page or pages of static data, then the programming algorithm shown in Figure 26-1 on page 56 is recommended;
otherwise, if there is a chance that there may be a page or pages of a sector that will contain static data, then the
programming algorithm shown in Figure 26-2 on page 57 is recommended.
Please contact Adesto for availability of devices that are specified to exceed the 50,000 cycle cumulative limit.
Note:
The Auto Page Rewrite command uses the same opcodes as the Read-Modify-Write command. If data bytes
are clocked into the device, then the device will perform a Read-Modify-Write operation. See the Read-Modify-
Write command description on page 15 for more details.
9.4
Status Register Read
The 2-byte Status Register can be used to determine the device's ready/busy status, page size, a Main Memory Page to
Buffer Compare operation result, the sector protection status, erase/program error status, and the device density. The
Status Register can be read at any time, including during an internally self-timed program or erase operation.
To read the Status Register, the CS pin must first be asserted and then the opcode D7h must be clocked into the device.
After the opcode has been clocked in, the device will begin outputting Status Register data on the SO pin during every
subsequent clock cycle. After the second byte of the Status Register has been clocked out, the sequence will repeat
itself, starting again with the first byte of the Status Register, as long as the CS pin remains asserted and the clock pin is
being pulsed. The data in the Status Register is constantly being updated, so each repeating sequence may output new
data. The RDY/BUSY status is available for both bytes of the Status Register and is updated for each byte.
Deasserting the CS pin will terminate the Status Register Read operation and put the SO pin into a high-impedance
state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Table 9-1.
Status Register Format – Byte 1
Note:
1.
R = Readable only
Bit
Name
Type
(1)
Description
7
RDY/BUSY Ready/Busy Status
R
0
Device is busy with an internal operation.
1
Device is ready.
6
COMP
Compare Result
R
0
Main memory page data matches buffer data.
1
Main memory page data does not match buffer data.
5:2
DENSITY
Density Code
R
0101 2-Mbit
1
PROTECT
Sector Protection
Status
R
0
Sector protection is disabled.
1
Sector protection is enabled.
0
PAGE SIZE
Page Size
Configuration
R
0
Device is configured for optional DataFlash-L page size (264
bytes).
1
Device is configured for default page size (256 bytes).



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