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LM2734Z Datasheet(PDF) 9 Page - National Semiconductor (TI) |
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LM2734Z Datasheet(HTML) 9 Page - National Semiconductor (TI) |
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9 / 9 page ![]() Design Guide (Continued) OUTPUT VOLTAGE The output voltage is set using the following equation where R2 is connected between the FB pin and GND, and R1 is connected between V O and the FB pin. A good value for R2 is 10k Ω. PCB Layout Considerations When planning layout there are a few things to consider when trying to achieve a clean, regulated output. The most important consideration when completing the layout is the close coupling of the GND connections of the C IN capacitor and the catch diode D1. These ground ends should be close to one another and be connected to the GND plane with at least two through-holes. Place these components as close to the IC as possible. Next in importance is the location of the GND connection of the C OUT capacitor, which should be near the GND connections of C IN and D1. There should be a continuous ground plane on the bottom layer of a two-layer board except under the switching node island. The FB pin is a high impedance node and care should be taken to make the FB trace short to avoid noise pickup and inaccurate regulation. The feedback resistors should be placed as close as possible to the IC, with the GND of R2 placed as close as possible to the GND of the IC. The V OUT trace to R1 should be routed away from the inductor and any other traces that are switching. High AC currents flow through the V IN, SW and VOUT traces, so they should be as short and wide as possible. However, making the traces wide increases radiated noise, so the designer must make this trade-off. Radiated noise can be decreased by choosing a shielded inductor. The remaining components should also be placed as close as possible to the IC. Please see Application Note AN-1229 for further considerations and the LM2734Z demo board as an example of a four-layer layout. Calculating Efficiency, and Junction Temperature: The complete LM2734Z DC/DC converter efficiency can be calculated in the following manner. Or Calculations for determining the most significant power losses are shown below. Other losses totaling less than 2% are not discussed. Power loss (P LOSS) is the sum of two basic types of losses in the converter, switching and conduction. Conduction losses usually dominate at higher output loads, where as switching losses remain relatively fixed and dominate at lower output loads. The first step in determining the losses is to calculate the duty cycle (D). V SW is the voltage drop across the internal NFET when it is on, and is equal to: V SW =IOUT xRDSON V D is the forward voltage drop across the Schottky diode. It can be obtained from the Electrical Characteristics section. If the voltage drop across the inductor (V DCR) is accounted for, the equation becomes: This usually gives only a minor duty cycle change, and has been omitted in the examples for simplicity. The conduction losses in the free-wheeling Schottky diode are calculated as follows: P DIODE =VD xIOUT(1-D) Often this is the single most significant power loss in the circuit. Care should be taken to choose a Schottky diode that has a low forward voltage drop. Another significant external power loss is the conduction loss in the output inductor. The equation can be simplified to: P IND =IOUT 2 xR DCR The LM2734Z conduction loss is mainly associated with the internal NFET: P COND =IOUT 2 xR DSON xD Switching losses are also associated with the internal NFET. They occur during the switch on and off transition periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node: P SWF = 1/2(VIN xIOUT x freq x TFALL) P SWR = 1/2(VIN xIOUT x freq x TRISE) P SW =PSWF +PSWR Typical Rise and Fall Times vs Input Voltage V IN T RISE T FALL 5V 8ns 4ns 10V 9ns 6ns 15V 10ns 7ns Another loss is the power required for operation of the inter- nal circuitry: P Q =IQ xVIN I Q is the quiescent operating current, and is typically around 1.5mA. The other operating power that needs to be calcu- lated is that required to drive the internal NFET: P BOOST =IBOOST xVBOOST www.national.com 9 |
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