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KM68B261A Datasheet(PDF) 3 Page - Samsung semiconductor |
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KM68B261A Datasheet(HTML) 3 Page - Samsung semiconductor |
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3 / 7 page  KM68B261A BiCMOS SRAM Rev 2.0 October-1994 3 5pF* +5V DOUT Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ, & tOHZ Output Load (A) VL =1.5V DOUT AC CHARACTERISTICS TEST CONDITIONS ON DATA RAM(TA= 0 to 70°C, Vcc=5V 5%, unless otherwise specified.) Parameter Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Value 0 to 3 V 3ns 1.5V See below * Including Scope and Jig Capacitance 255 480 ZO=50 RL=50 Ω Ω Ω Ω CAPACITANCE*(f=1MHz, TA =25 °C) * Note: Capacitance is sampled and not 100% tested. Item Symbol Test Condition Min. Max. Unit Input Capacitance Input/Output Capacitance CIN CI/O VIN=0V VI/O=0V 7 7 pF pF - - ± |
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