LM4401K datasheet(2/5 Pages) LEIDITECH

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 16 V

1.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±12 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.6

0.92

1.5

Gate Threshold Temperature

Coefficient

VGS(TH)/TJ

−2.1

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 0.63 A

0.29

0.375

VGS = 2.5 V, ID = 0.40 A

0.36

0.445

Forward Transconductance

gFS

VDS = 4.0 V, ID = 0.63 A

2.0

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 20 V

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

2.8

5.0

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 10 V,

ID = 0.63 A

1.3

3.0

Threshold Gate Charge

QG(TH)

0.1

Gate−to−Source Charge

QGS

0.2

Gate−to−Drain Charge

QGD

0.4

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDD = 10 V,

ID = 0.5 A, RG = 20 W

0.083

Rise Time

0.227

Turn−Off Delay Time

td(OFF)

0.786

Fall Time

0.506

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS =0.23 A

TJ = 25°C

0.76

1.1

TJ = 125°C

0.63

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 0.63 A

0.410

2. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

Rev :

www.leiditech.com

01.06.2015

2/5

LM4401k

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