FDPC8016S datasheet(9/12 Pages) ONSEMI

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FDPC8016S

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TYPICAL CHARACTERISTICS (Q2 N-Channel)

(TJ = 25°C unless otherwise noted)

Figure 14. On-Region Characteristics

Figure 15. Normalized On-Resistance vs. Drain

Current and Gate Voltage

Figure 16. Normalized On-Resistance vs.

Junction Temperature

Figure 17. On-Resistance vs. Gate to Source

Voltage

Figure 18. Transfer Characteristics

Figure 19. Source to Drain Diode Forward

Voltage vs. Source Current

0.0

0.2

0.4

0.6

0.8

100

120

140

VGS = 3.5 V

VGS = 3 V

VGS = 4.5 V

VGS = 2.5 V

VGS = 10 V

DS, DRAIN TO SOURCE VOLTAGE (V)

100

120

140

0.0

1.5

3.0

4.5

6.0

VGS = 3 V

, DRAIN CURRENT (A)

VGS = 3.5 V VGS = 4.5 V

VGS = 2.5 V

VGS = 10 V

−75 −50 −25

75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

, JUNCTION TEMPERATURE ( oC)

123456789

VGS

, GATE TO SOURCE VOLTAGE (V)

1234

100

120

140

VDS = 5 V

VGS, GATE TO SOURCE VOLTAGE (V)

0.0

0.2

0.4

0.6

0.8

1.0

0.001

0.01

0.1

100

200

VSD, BODY DIODE FORWARD VOLTAGE (V)

ID= 35 A

VGS = 10 V

ID = 35 A

TJ = 125 oC

TJ = 25 oC

TJ = 125 oC

TJ = 25 oC

TJ = −55oC

VGS = 0 V

TJ = 125 oC

TJ = 25 oC

TJ = −55oC

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

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