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FS75R12KE3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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FS75R12KE3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  IC, nom 75 A IC 105 A min. typ. max. - 1,7 2,15 V - 2,0 - V mA VCE= 1200V, VGE= 0V, Tvj= 25°C Gateladung VGE= -15V...+15V QG - gate charge nF - 0,2 collector emitter cut off current ICES Rückwirkungskapazität reverse transfer capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Kollektor Emitter Reststrom Cres Eingangskapazität input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V prepared by: MOD-D2; M. Münzer VGES revision: 3.0 2,5 5,0 5,8 Transistor Wechselrichter / transistor inverter date of publication: 2002-09-03 Kollektor Emitter Sättigungsspannung IC= 75A, VGE= 15V, Tvj= 25°C collector emitter saturation voltage A Isolations Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min: VISOL ICRM Ptot 350 repetitive peak forward current kV VR= 0V, tp= 10ms, Tvj= 125°C Technische Information / technical information FS75R12KE3 IGBT-Module IGBT-Modules VCES Periodischer Spitzenstrom Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung VCEsat Charakteristische Werte / characteristic values approved: SM TM; Robert Severin IC= 75A, VGE= 15V, Tvj= 125°C Gate Schwellenspannung IC= 3,0mA, VCE= VGE, Tvj= 25°C gate threshold voltage 1200 V Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Kollektor Emitter Sperrspannung Tc= 80°C Kollektor Dauergleichstrom collector emitter voltage Tvj= 25°C Tc= 25°C DC collector current W V gate emitter peak voltage 150 Dauergleichstrom IF 75 Tc= 25°C; Transistor repetitive peak collector current tp= 1ms, Tc= 80°C Periodischer Kollektor Spitzenstrom A DC forward current +20 1200 A²s tp= 1ms IFRM 150 A Grenzlastintegral V nF 5,3 - 0,7 - µC IGES - 400 6,5 - - - 5 - - I²t value I²t VGE(th) Cies nA gate emitter leakage current Gate Emitter Reststrom VCE= 0V, VGE= 20V, Tvj= 25°C 1 (8) DB_FS75R12KE3_3.0 .xls 2002-09-03 |
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