MR2A16A

MR2A16A Rev. 11.3 3/2018

1

Copyright © Everspin Technologies 2018

256K x 16 MRAM Memory

• Fast 35 ns Read/Write cycle

• SRAM compatible timing, uses existing SRAM control-

lers without redesign

• Unlimited Read & Write endurance

• Data non-volatile for >20 years at temperature

• One memory replaces Flash, SRAM, EEPROM and

BBSRAM in a system for simpler, more efficient design

• Replaces battery-backed SRAM solutions with MRAM

to improve reliability

• 3.3 volt power supply

• Automatic data protection on power loss

• Commercial, Industrial, Extended temperatures

• AEC-Q100 Grade 1 option

• All products meet MSL-3 moisture sensitivity level

• RoHS-compliant SRAM TSOP2 and BGA Packages

The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga-

nized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing

with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati-

cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of

specification.

The MR2A16A is the ideal memory solution for applications that must permanently store and re-

trieve critical data and programs quickly.

The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin

small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM

products and other nonvolatile RAM products.

The MR2A16A provides highly reliable data storage over a wide range of temperatures. The prod-

uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),

and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.

RoHS

FEATURES

INTRODUCTION

48-ball BGA

44-pin TSOP2