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DS1822 Datasheet(PDF) 19 Page - Maxim Integrated Products |
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DS1822 Datasheet(HTML) 19 Page - Maxim Integrated Products |
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19 / 21 page ![]() DS1822 ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground -0.5V to +6.0V Operating Temperature Range -55 °C to +125°C Storage Temperature Range -55 °C to +125°C Solder Dip Temperature See IPC/JEDEC J-STD-020A Specification Reflow Oven Temperature +220°C *These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. DC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; VDD = 3.0V to 5.5V) PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES Supply Voltage VDD Local Power +3.0 +5.5 V 1 Pullup Supply Voltage VPU Parasite Power +3.0 +5.5 V 1, 2 Local Power +3.0 VDD Thermometer Error tERR -10°C to +85°C ±2 °C 3 -55°C to +125°C ±3 Input Logic Low VIL -0.3 +0.8 V 1, 4, 5 Input Logic High VIH Local Power +2.2 The lower of 5.5 or VDD + 0.3 V 1, 6 Parasite Power +3.0 Sink Current IL VI/O=0.4V 4.0 mA 1 Standby Current IDDS 750 1000 nA 7, 8 Active Current IDD VDD=5V 1 1.5 mA 9 DQ Input Current IDQ 5 µA 10 Drift ±0.2 °C 11 NOTES: 1. All voltages are referenced to ground. 2. The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the high level of the pullup is equal to VPU. In order to meet the VIH spec of the DS1822, the actual supply rail for the strong pullup transistor must include margin for the voltage drop across the transistor when it is turned on; thus: VPU_ACTUAL = VPU_IDEAL + VTRANSISTOR. 3. See typical performance curve in Figure 17. 4. Logic low voltages are specified at a sink current of 4mA. 5. To guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have to be reduced to as low as 0.5V. 6. Logic high voltages are specified at a source current of 1mA. 7. Standby current specified up to +70 °C. Standby current typically is 3µA at +125°C. 8. To minimize IDDS, DQ should be within the following ranges: GND ≤ DQ ≤ GND + 0.3V or VDD - 0.3V ≤ DQ ≤ V DD. 9. Active current refers to supply current during active temperature conversions or EEPROM writes. 10. DQ line is high (high-Z state). 11. Drift data is based on a 1000 hour stress test at +125°C with VDD = 5.5V. 19 of 21 |
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