Document Number: 91119

www.vishay.com

S11-1053-Rev. C, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

800

3.0

78

9.6

45

Configuration

Single

N-Channel MOSFET

G

D

S

(TO-263)

G

D

S

(TO-262)

G

D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHFBE30S-GE3

SiHFBE30L-GE3

Lead (Pb)-free

IRFBE30SPbF

IRFBE30LPbF

SiHFBE30S-E3

SiHFBE30L-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

± 20

Continuous Drain Current

4.1

A

2.6

16

Linear Derating Factor

1.0

W/°C

260

mJ

4.1

A

13

mJ

Maximum Power Dissipation

125

W

dV/dt

2.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply