IRFP460

www.vishay.com

Vishay Siliconix

S22-0058-Rev. B, 31-Jan-2022

1

Document Number: 91237

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Isolated central mounting hole

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

Note

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because its isolated mounting hole.

It also provides greater creepage distances between pins to

meet the requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

PRODUCT SUMMARY

500

0.27

210

29

110

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP460PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

500

V

Gate-source voltage

± 20

Continuous drain current

20

A

13

80

Linear derating factor

2.2

W/°C

960

mJ

20

A

28

mJ

Maximum power dissipation

280

W

dV/dt

3.5

V/ns

Operating junction and storage temperature range

-55 to +150

°C

Soldering recommendations (peak temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m