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STP80N240K6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP80N240K6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STP80N240K6 800 V 220 mΩ 16 A • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED Lighting Description This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link STP80N240K6 Product summary Order code STP80N240K6 Marking 80N240K6 Package TO-220 Packing Tube N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package STP80N240K6 Datasheet DS13772 - Rev 2 - February 2022 For further information contact your local STMicroelectronics sales office. www.st.com |
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