STP80N240K6 datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 800 V

µA

VGS = 0 V, VDS = 800 V, TC = 125 °C(1)

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±1

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3.5

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 7 A

197

220

mΩ

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

1350

Coss

Output capacitance

Co(er) (1)

Equivalent capacitance time

VDS = 0 to 640 V, VGS = 0 V

139

Co(tr) (2)

Equivalent capacitance energy

Intrinsic gate resistance

f = 1 MHz , ID= 0 A

1.8

Ω

Total gate charge

VDD = 640 V, ID = 7 A, VGS= 0 to 10 V

(see Figure 19. Test circuit for gate

charge behavior)

25.9

Qgs

Gate-source charge

6.9

Qgd

Gate-drain charge

8.4

1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 V to the stated

value.

2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 V to the stated

value.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 400 V, ID =7 A, RG = 4.7 Ω

VGS = 10 V

see (Figure 17. Test circuit for

resistive load switching times and

Figure 18. Switching time waveform)

Rise time

5.3

td(off)

Turn-off delay time

47.8

Fall time

STP80N240K6

Electrical characteristics

DS13772 - Rev 2

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