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STL26N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL26N60DM6
Description  N-channel 600 V, 175 mΩ typ., 15 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL26N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG291120180825SOA
101
100
10-1
10-1
100
101
102
ID
(A)
VDS (V)
Operation in this area
is limited by RDS(on)
TJ ≤ 150 °C,
TC = 25 °C,
single pulse
tp = 1 μs
tp = 10 μs
tp = 100 μs
tp = 1 ms
tp = 10 ms
Figure 2. Normalized thermal impedance
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
K
tp (s)
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
Single pulse
Zth PowerFLAT 8x8 HV
Figure 3. Output characteristics
GADG291120180826OCH
50
40
30
20
10
0
0
4
8
12
16
20
ID
(A)
VDS (V)
VGS = 6 V
VGS = 7 V
VGS = 8 V
VGS = 9 V
VGS = 10 V
Figure 4. Transfer characteristics
GADG291120180826TCH
50
40
30
20
10
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Gate charge vs gate-source voltage
GADG291120180831QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
4
8
12
16
20
24
VDS
(V)
VGS
(V)
Qg (nC)
Qg
Qgd
Qgs
VDS
VDD = 480 V, ID = 18 A
Figure 6. Capacitance variations
GADG291120180831CVR
10 3
10 2
10 1
10 0
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
STL26N60DM6
Electrical characteristics (curves)
DS12852 - Rev 3
page 5/14



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