STL26N60DM6 datasheet(6/14 Pages) STMICROELECTRONICS

Part #	STL26N60DM6

Description	N-channel 600 V, 175 mΩ typ., 15 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 14 page

Figure 7. Static drain-source on-resistance

GADG291120180834RID

190

185

180

175

170

165

160

RDS(on)

(mΩ)

ID (A)

VGS = 10 V

Figure 8. Normalized on-resistance vs temperature

GADG291120180832RON

2.5

2.0

1.5

1.0

0.5

-75

-25

125

RDS(on)

(norm.)

Tj (°C)

VGS = 10 V

Figure 9. Normalized gate threshold voltage vs

temperature

GADG291120181054VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

Tj (°C)

ID = 250 µA

Figure 10. Normalized V(BR)DSS vs temperature

GADG291120181051BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

Tj (°C)

ID = 1 mA

Figure 11. Output capacitance stored energy

GADG291120181055EOS

100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

Figure 12. Source-drain diode forward characteristics

GADG291120181054SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

TJ = -50 °C

TJ = 25 °C

TJ = 150 °C

STL26N60DM6

Electrical characteristics (curves)

DS12852 - Rev 3

page 6/14

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