A

K

A

K

K

TO-220AC

K

NC

A

D²PAK

K

K

NC

A

D²PAK HV

A

Product label

Features

•

AEC-Q101 qualified

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Dedicated to PFC applications

•

High forward surge capability

•

PPAP capable

•

•

•

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top

coating)

•

ECOPACK®2 compliant

Applications

•

On board charger

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC12065-Y will boost

performance in hard switching conditions. Its high forward surge capability ensures

good robustness during transient phases.

Product status link

STPSC12065-Y

Product summary

12 A

650 V

175 °C

1.30 V

Automotive 650 V, 12 A, silicon carbide power Schottky diode

STPSC12065-Y

Datasheet

DS11624 - Rev 4 - December 2018

For further information contact your local STMicroelectronics sales office.

www.st.com