STPSC12065-Y datasheet(2/15 Pages) STMICROELECTRONICS

2 / 15 page

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 145 °C(1), DC

IFRM

Repetitive peak forward current

Tc =145 °C(1), Tj = 175 °C, δ = 0.1

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

220

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature

-40 to +175

°C

1. Value based on Rth(j-c) max.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

0.85

1.25

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

150

µA

Tj = 150 °C

200

1000

Tj = 25 °C

VR = 600 V

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 12 A

1.30

1.45

Tj = 150 °C

1.45

1.65

Tj = 175 °C

1.50

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.02 x IF(AV) + 0.065 x IF 2(RMS)

Table 4. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

QCj (1)

Total capacitive charge

VR = 400 V

STPSC12065-Y

Characteristics

DS11624 - Rev 4

page 2/15

STPSC12065-Y Datasheet(PDF) 2 Page - STMicroelectronics

STPSC12065-Y Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL