IRLL014, SiHLL014

www.vishay.com

Vishay Siliconix

S21-0322-Rev. G, 05-Apr-2021

1

Document Number: 91319

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

Marking code: LA

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dV/dt rating

• Logic-level gate drive

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

PRODUCT SUMMARY

60

0.20

8.4

3.5

6.0

Configuration

Single

N-Channel MOSFET

G

D

S

SOT-223

G

D

S

D

Available

ORDERING INFORMATION

Package

SOT-223

Lead (Pb)-free and halogen-free

SiHLL014TR-GE3

Lead (Pb)-free

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

60

V

Gate-source voltage

± 10

Continuous drain current

2.7

A

1.7

22

Linear derating factor

0.025

W/°C

0.017

100

mJ

2.7

A

0.31

mJ

Maximum power dissipation

3.1

W

2.0

dV/dt

4.5

V/ns

Operating junction and storage temperature range

-55 to +150

°C

For 10 s

300