SiR167DP

www.vishay.com

Vishay Siliconix

S18-0209-Rev. A, 19-Feb-18

1

Document Number: 76017

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

P-Channel 30 V (D-S) MOSFET

FEATURES

• Material categorization:

for

definitions

of

compliance

please

see

www.vishay.com/doc?99912

APPLICATIONS

• Adapter and charger switch

•Load switch

• Battery management

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 65 °C/W

PRODUCT SUMMARY

-30

0.0055

0.0093

36

Configuration

Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

S

G

D

P-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiR167DP-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

-30

V

Gate-source voltage

± 25

A

Pulsed drain current (t = 100 μs)

-120

Continuous source-drain diode current

-54.8

Single pulse avalanche current

L = 0.1 mH

-20

Single pulse avalanche energy

20

mJ

Maximum power dissipation

65.8

W

42.1

Operating junction and storage temperature range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

 10 s

20

25

°C/W

Maximum junction-to-case (drain)

Steady state

1.5

1.9