NVC080N120SC1 datasheet(4/8 Pages) ONSEMI

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NVC080N120SC1

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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

1200

Gate−to−Source Voltage

VGS

−15/+25

Recommended Operation Values of Gate−

to−Source Voltage

TC < 175°C

VGSop

−5/+20

Continuous Drain

Current RqJC

Steady

State

TC = 25°C

Power Dissipation RqJC

178

Continuous Drain

Current RqJC

Steady

State

TC = 100°C

Power Dissipation RqJC

Pulsed Drain Current (Note 2)

TC = 25°C

IDM

132

Single Pulse Surge Drain Current Capability

TC = 25°C, tp = 10 ms, RG = 4.7 W

IDSC

132

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to +175

°C

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 18.5 A, L = 1 mH) (Note 3)

EAS

171

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Note 1)

RqJC

0.84

°C/W

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular

conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 171 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18.5 A, VDD = 120 V, VGS = 18 V.

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