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NVC080N120SC1 Datasheet(PDF) 5 Page - ON Semiconductor

Part # NVC080N120SC1
Description  MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVC080N120SC1 Datasheet(HTML) 5 Page - ON Semiconductor

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NVC080N120SC1
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS =0V, ID = 1 mA
1200
−
−
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 1 mA, referenced to 25_C
−
700
−
mV/_C
Zero Gate Voltage Drain Current
IDSS
VGS =0V, VDS = 1200 V, TJ =25_C
−
−
100
mA
VGS =0V, VDS = 1200 V, TJ = 175_C
−
−
250
mA
Gate−to−Source Leakage Current
IGSS
VGS = +25/−15 V, VDS =0V
−
−
±1
mA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
VGS =VDS, ID = 5 mA
1.8
2.7
4.3
V
Recommended Gate Voltage
VGOP
−5
−
+20
V
Drain−to−Source On Resistance
RDS(on)
VGS =20V, ID = 20 A, TJ =25_C
−
80
110
mW
VGS =20V, ID = 20 A, TJ = 150_C
−
114
−
Forward Transconductance
gFS
VDS =20V, ID =20A
−
13
−
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 800 V
−
1112
−
pF
Output Capacitance
COSS
−
80
−
Reverse Transfer Capacitance
CRSS
−
6.5
−
Total Gate Charge
QG(tot)
VGS = −5/20 V, VDS = 600 V, ID =20A
−
56
−
nC
Gate−to−Source Charge
QGS
−
11
−
Gate−to−Drain Charge
QGD
−
12
−
Gate Resistance
RG
f = 1 MHz
−
1.7
−
W
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
VGS = −5/20 V, VDS = 800 V,
ID = 20 A, RG = 4.7 W,
Inductive Load
−
13
−
ns
Rise Time
tr
−
20
−
Turn−Off Delay Time
td(off)
−
22
−
Fall Time
tf
−
10
−
Turn-On Switching Loss
EON
−
258
−
mJ
Turn-Off Switching Loss
EOFF
−
52
−
Total Switching Loss
ETOT
−
311
−
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
Forward Current
ISD
VGS = −5V
−
−
18
A
Pulsed Drain−to−Source Diode For-
ward Current (Note 2)
ISDM
VGS = −5V
−
−
132
A
Forward Diode Voltage
VSD
VGS = −5V, ISD = 10 A
−
4
−
V
Reverse Recovery Time
tRR
VGS = −5/20 V, ISD =20A,
dIS/dt = 1000 A/ms
−
16
−
ns
Reverse Recovery Charge
QRR
−
62
−
nC
Reverse Recovery Energy
EREC
−
5
−
mJ
Peak Reverse Recovery Current
IRRM
−
8
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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