IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

www.vishay.com

Vishay Siliconix

S21-0943-Rev. D, 20-Sep-2021

1

Document Number: 91119

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

Note



RoHS-compliant and / or parts that are non RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

PRODUCT SUMMARY

800

3.0

78

9.6

45

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHFBE30S-GE3

SiHFBE30L-GE3

Lead (Pb)-free

IRFBE30SPbF

IRFBE30LPbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

± 20

Continuous Drain Current

4.1

A

2.6

16

Linear Derating Factor

1.0

W/°C

260

mJ

4.1

A

13

mJ

Maximum Power Dissipation

125

W

dV/dt

2.0

V/ns

Operating Junction and Storage Temperature Range

-55 to +150

°C

for 10 s

300

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m