Specification Subject to Change Without Notice

M-Pulse

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576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

Bipolar High fT Low Voltage

NPN Silicon Transistors

MP4T3243 Series

V4.00

Features

• Designed for 3-5 Volt Operation

• Useable to 6 GHz in Oscillators

• Useable for Low Noise, Low Voltage Driver Amplifiers

Through 3 GHz

• Useful for Class C Amplifiers

• Available as Chips and in Hermetic and Surface

Mount Packages

• Can be Screened to JANTX, JANTXV Equivalent Levels

(ceramic pacakges)

• Tape and Reel Packaging Available for packaged

devices.

Description

power silicon bipolar transistors is designed for usage in

battery operated systems with 3-5 volt collector bias. They

are useful as low phase noise oscillator transistors through 6

GHz and as moderate power driver amplifiers through 3

GHz.

These transistors are available as chips for hybrid oscillators

or in ceramic packages for military or commercial usage.

Both the chips and hermetic packages can be screened to

JANTX equivalent levels.

These transistors use high temperature gold, platinum,

titanium metalization with silicon dioxide and silicon nitride

passivation. The chip is emitter ballasted with polysilicon

resistors to prevent current concentration at high current

operation.

Case Style

SOT-23

Chip

Micro-X