MPC5646C datasheet(46/116 Pages) NXP

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MPC5646C Microcontroller DataSheet, Rev. 7

Electrical Characteristics

NXP Semiconductors

Figure 5. I/O input DC electrical characteristics definition

4.6.3

I/O output DC characteristics

The following tables provide DC characteristics for bidirectional pads:

Table 13. I/O input DC electrical characteristics

Symbol

Parameter

Conditions1

1 V

DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.

Value2

2 V

DD as mentioned in the table is VDD_HV_A/VDD_HV_B. All values need to be confirmed during device validation.

Unit

Min

Typ

Max

VIH

SR P Input high level CMOS (Schmitt

Trigger)

—0.65VDD

—VDD +0.4

VIL

SR P Input low level CMOS (Schmitt

Trigger)

—

−0.3

—

0.35VDD

VHYS CC C Input hysteresis CMOS (Schmitt

Trigger)

—0.1VDD

——

ILKG CC P Digital input leakage

No injection

on adjacent

TA = −40 °C

—

PTA = 25 °C

—

DTA = 105 °C

—

500

PTA = 125 °C

—

1000

WFI SR P Width of input pulse rejected by

analog filter3

3 Analog filters are available on all wakeup lines.

——

—

404

WNFI SR P Width of input pulse accepted by

analog filter(3)

—

10004

4 The width of input pulse in between 40 ns to 1000 ns is indeterminate. It may pass the noise or may not depending

on silicon sample to sample variation.

——

VIL

VIN

VIH

PDIx = ‘1

VDD

VHYS

(GPDI register of SIUL)

PDIx = ‘0’

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