QPD1028LEVB datasheet(1/16 Pages) QORVO

Part #	QPD1028LEVB

Description	750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

PDF	16 Pages

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Manufacturer	QORVO [Qorvo, Inc]

Direct Link	https://www.qorvo.com/

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QPD1028L

750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor

Data Sheet Rev. C, Oct 2021 | Subject to change without notice

1 of 16

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®

Ni-780 Package

Key Features

• Frequency Range: 1.2 to 1.4 GHz

• Linear Gain1: 19.8 dB

• Output Power (P3dB)1: 838.5 W

• Drain Efficiency (P3dB)1: 67.3%

• Operating Voltage: 65 V

• CW and Pulse capable

Note 1: EVB Performance @ 1.3 GHz

Product Overview

The Qorvo QPD1028L is a 750 W (P3dB) discrete GaN on

SiC HEMT which operates from 1.2 to 1.4 GHz. Input pre-

match within the package results in ease of external board

match and saves board space. The device is in an industry

standard air cavity package and is ideally suited for radar.

The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Functional Block Diagram

Ordering Information

Applications

• L-Band Radar

Part No.

Description

QPD1028L

1.2

– 1.4 GHz Transistor (18 pcs in tray)

QPD1028LEVB

1.2

– 1.4 GHz Evaluation Board

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Qorvo, Inc	QPD1028EVB	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021

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QPD1028LEVB Datasheet(PDF) 1 Page - Qorvo, Inc

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