QPD1028L

750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor

Data Sheet Rev. C, Oct 2021 | Subject to change without notice

2 of 16

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Parameter

Rating

Units

225

V

-7 to +2

V

71

A

79

mA

Power Dissipation, Pulsed,

605

W

45.2

dBm

Operating Channel

275

°C

Storage Temperature

−65 to +150

°C

Notes:

1. Operation of this device outside the parameter ranges given

above may cause permanent damage

2. Pulsed, 100us PW, 10% DC, Package base at 85 °C

3. Pulsed, 100us PW, 10% DC, T = 25 °C, 50 ohms load

4. Package base at 85 °C

Parameter

Min

Typ

Max Units

Operating Temp. Range

-40

+25

+85

 °C

–

65

–

V

–

750

–

mA

–

19

–

A

–

-2.7

–

V

–

–

400

W

–

–

238

W

Notes:

1. Electrical performance is measured under conditions noted in

the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions

2. CW operates at drain voltage of 50 V

4. Pulsed, 100us PW, 10% DC

Measured Load Pull Performance

Parameter

Typical Values

Units

Frequency, F

1.2

1.3

1.4

GHz

59.5

59.6

59.4

dBm

62.7

63.6

63.6

%

17.4

17.3

17.4

dB

Notes:

1.

2.

Pulsed, 100 us Pulse Width, 10% Duty Cycle.

Measured Load Pull Performance

Parameter

Typical Values

Units

Frequency, F

1.2

1.3

1.4

GHz

57.7

57.9

57.4

dBm

76.0

76.7

74.4

%

19.4

19.1

19.0

dB

Notes:

1.

2.

Pulsed, 100 us Pulse Width, 10% Duty Cycle.