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4946 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4946
Description  N-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4946 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4946 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4946 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4946 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4946 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4946 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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www.sztuofeng.com
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
00
IGSS
±100
nA
VGS(th)
1.0
1.5
V
ID(ON)
20
A
52
m
Ω
gFS
12
S
VSD
0.8
1.2
V
IS
3
A
Ciss
931
pF
Coss
60
pF
Crss
50
pF
Rg
9.5
Ω
Qg (10V)
20.2
Qg (4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
33.8
tf
trr
23.5
ns
Qrr
13.4
nC
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=30V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
VDD= 30V, VGEN= 10V, RL=10 Ω,
RGEN=6Ω
Turn-Off Fall Time
Turn-On DelayTime
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Total Gate Charge (10V)
VDD= 30V, VGEN = 10V, ID= 3A
m
Ω
VGS= 4.5V, ID= 4.7A
IS= 3A,VGS=0V
VDS= 15V, ID = 5.3A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ID= 250µA
VDS= 60V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF= 5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID= 250µA, VGS=0V
VGS= 4.5V, VDS= 5V
VGS= 10V, ID= 5.3A
Reverse Transfer Capacitance
IF= 5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
n
43
38
42
2.0
nC
10.2
nC
4.2
nC
3.5
nC
ns
4.8
ns
9.4
ns
5.6
ns
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4946



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