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DB92074-AAS/A1
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V
F)
1.6
V
I
F = 40mA
Reverse Voltage (V
R)3
V
I
R = 100µA
Reverse Current (I
R)
100
µAV
R = 3V
Output
Collector-emitter Breakdown (BV
CEO)30
V
I
C = 1mA
( Note 1 )
Emitter-collector Breakdown (BV
ECO)
5
V
I
E = 100µA
Collector-emitter Dark Current (I
CEO)
100
nA
V
CE = 15V
Coupled
On-State Collector Current I
C ( ON )
( Note 1 )
ISTS149
25
µA
40mA I
F , 5V VCE
D(mm) = 3.8mm
ISTS703A
200
µA
40mA I
F , 5V VCE
D(mm) = 3.8mm
ISTS708
10
µA
40mA I
F , 5V VCE
D(mm) = 3.8mm
Collector-emitter Saturation VoltageV
CE(SAT)
ISTS149
0.4
V
40mA I
F , 3µA IC
D(mm) = 3.8mm
ISTS703A
0.4
V
40mA I
F , 100µA IC
D(mm) = 3.8mm
ISTS708
0.4
V
40mA I
F , 3µA IC
D(mm) = 3.8mm
Note 1
Special Selections are available on request. Please consult the factory.
24/9/97
ELECTRICAL CHARACTERISTICS ( T
A= 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 85°C
Operating Temperature
-25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
3V
Power Dissipation
90mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
5V
Collector Current I
C
20mA
Power Dissipation
50mW
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