FQD8P10TM-F085 datasheet(4/8 Pages) ONSEMI

4 / 8 page

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-1

150℃

※

Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

-V

SD , Source-Drain Voltage [V]

0.0

0.3

0.6

0.9

1.2

1.5

※

Note : T

J = 25

℃

GS = - 20V

GS = - 10V

-I

D , Drain Current [A]

468

-1

150℃

25℃

-55℃

※

Notes :

1. V

DS = -40V

2. 250μ s Pulse Test

-V

GS , Gate-Source Voltage [V]

-1

-2

-1

Top :

-15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-5.5 V

-5.0 V

Bottom : -4.5 V

※

Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

-V

DS, Drain-Source Voltage [V]

DS = -50V

DS = -20V

DS = -80V

※

Note : I

D = -8.0 A

G, Total Gate Charge [nC]

-1

100

200

300

400

500

600

700

800

900

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※

Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

-V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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