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TF040N03M Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # TF040N03M
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  5 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF040N03M Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF040N03M Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF040N03M Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF040N03M Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF040N03M Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF040N03M Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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Single Pulse Avalanche Energy
EAS
230
mJ
Avalanche Current
IAS IAR
30
A
●Thermal resistance
Parameter
Symbol
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
3.2
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
57
°C/W
Soldering temperature, wave soldering for
8s
Tsold
-
-
265
°C
●Electronic Characteristics
Parameter
Symbol
Condition
Min.
Typ
Max.
Unit
Drain-Source Breakdown
Voltage
BVDSS
VGS =0V,ID =250uA
30
V
Gate Threshold Voltage
VGS(TH)
VGS =V DS, ID =250uA
1.0
2.5
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS =0V
1.0
uA
Gate- Source Leakage Current
IGSS
VGS=±20V ,VDS =0V
±100
nA
Static Drain-source On
Resistance
RDS(ON)
VGS=10V, ID=20A
4.3
5.5
mΩ
VGS=4.5V, ID=20A
7.0
9.0
mΩ
Forward Transconductance
gFS
VDS =25V, ID=10A
18
S
Source-drain voltage
VSD
Is=20A
1.20
V
●Electronic Characteristics
Parameter
Symbol
Condition
Min.
Typ
Max.
Unit
Input capacitance
Ciss
Vds=15V,Vgs=0V
f = 1MHz
-
1784
-
pF
Output capacitance
Coss
-
266
-
Reverse transfer capacitance
Crss
-
212
-
⚫Gate Charge characteristics(Ta = 25
℃)
Parameter
Symbol
Condition
Min.
Typ
Max.
Unit
Gate Risistance
Rg
f = 1MHz
1.5
Ω
Total gate charge
Qg
VDD = 15V
ID = 20A
VGS = 10V
-
38
-
nC
Gate - Source charge
Qgs
-
5.8
-
Gate - Drain charge
Qgd
-
7.9
-
TF040N03M
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N -CHANNEL ENHANCEMENT MODE POWER MOSFET
Turn-ON Delay time
tD(on)
VGS=10V ,VDS=10V
RG =6.0Ω, I=20A
7
ns
Turn-ON Rise time
tr
6
ns
Turn-Off Delay time
tD(off)
30
ns
Turn-Off Fall time
tf
8
ns
2
www.sztuofeng.com
Feb 2021 V1.0
1.5



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