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RHRPM4423K01V Datasheet(PDF) 9 Page - STMicroelectronics

Part # RHRPM4423K01V
Description  Rad-hard 4.5 A dual inverting low-side MOSFET driver
PDF  31 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RHRPM4423K01V Datasheet(HTML) 9 Page - STMicroelectronics

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6
Radiations
6.1
Total ionizing dose (MIL-STD-883 test method 1019)
The products that are guaranteed in radiation within RHA QML-V system, fully comply with the MIL-STD-883 test
method 1019 specification. The RHRPM4423 is being RHA QML-V qualified, tested and characterized in full
compliance with the MIL-STD-883 specification, both below 10 mrad/s (low dose rate) and between 50 and 300
rad/s (high dose rate).
•
Testing is performed in accordance with MIL-PRF-38535 and the test method 1019 of the MIL-STD-883 for
total ionizing dose (TID).
•
ELDRS characterization is performed in qualification only on both biased and unbiased parts, on a sample of
ten units from two different wafer lots.
•
Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results
obtained during the initial qualification.
Table 5. TID
Type
Conditions
Value
Unit
TID
50 rad(Si)/s high dose rate up to
100
krad
10 mrad(Si)/s low dose rate up to
100
ELDRS free up to
100
Output stage source resistance drift
From 0 krad to 100 krad at 50 rad/s
< 0.3
Ω
Output stage sink resistance drift
From 0 krad to 100 krad at 50 rad/s
< 0.3
Ω
6.2
Heavy ions
The heavy ions trials are performed on qualification lots only. No additional test is performed. The table below
summarizes the results of heavy ion tests.
Table 6. HI
Feature
Conditions
Value
Unit
SEL/SEB
LET = 60 MeV.cm²/mg VCC = 18 V
No latch-up/burnout
-
LET = 70 MeV.cm²/mg VCC = 16 V
No latch-up/burnout
SET
VCC = 4.5 V
LETTH = 18.5
MeV*cm²/mg
σSAT = 7*10-6
cm²
VCC = 18 V
LETTH = 18
MeV*cm²/mg
σSAT = 2*10-6
cm²
RHRPM4423
Radiations
DS11827 - Rev 3
page 9/31



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