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STGYA75H120DF2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGYA75H120DF2
Description  Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA75H120DF2 Datasheet(HTML) 1 Page - STMicroelectronics

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background image
Max247 long leads
TAB
1
2
3
1
2
3
TAB
C(2, TAB)
E(3)
NG1E3C2T
G(1)
Features
•
Maximum junction temperature: TJ = 175 °C
•
5 μs of short-circuit withstand time
•
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
•
Tight parameter distribution
•
Positive VCE(sat) temperature coefficient
•
Low thermal resistance
•
Very fast recovery antiparallel diode
Applications
•
UPS
•
Solar inverters
•
Welding
•
PFC
Description
This device is IGBT developed using an advanced proprietary trench gate field-
stop structure. This device is part of the H series of IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of high switching frequency converters. Moreover, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGYA75H120DF2
Product summary
Order code
STGYA75H120DF2
Marking
G75H120DF2
Package
Max247 long leads
Packing
Tube
Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT
in a Max247 long leads package
STGYA75H120DF2
Datasheet
DS13822 - Rev 2 - October 2021
For further information contact your local STMicroelectronics sales office.
www.st.com


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