STGYA75H120DF2 datasheet(3/15 Pages) STMICROELECTRONICS

Part #	STGYA75H120DF2

Description	Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 15 page

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

1200

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 75 A

2.1

2.6

VGE = 15 V, IC = 75 A, TJ = 125 °C

2.4

VGE = 15 V, IC = 75 A, TJ = 175 °C

2.5

Forward on-voltage

IF = 75 A

3.8

IF = 75 A, TJ = 125 °C

2.8

IF = 75 A, TJ = 175 °C

2.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 2 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 1200 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

6300

Coes

Output capacitance

420

Cres

Reverse transfer capacitance

146

Total gate charge

VCC = 960 V, IC = 75 A, VGE = 0 to 15 V

(see Figure 29. Gate charge test circuit)

313

Qge

Gate-emitter charge

Qgc

Gate-collector charge

153

STGYA75H120DF2

Electrical characteristics

DS13822 - Rev 2

page 3/15

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