AT86RF401 datasheet(2/52 Pages) ATMEL

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AT86RF401

1424F–RKE–12/03

In-system programmable, nonvolatile Flash program memory and EEPROM data stor-

age make possible rapid time-to-market and lower inventory costs.

In-system programmable, nonvolatile Flash program memory and EEPROM data stor-

age m ake possible rapid tim e-to-market and lower inventory costs.In-system

programmable, nonvolatile Flash program memory and EEPROM data storage make

possible rapid time-to-market and lower inventory costs.Static current consumption is

kept to a minimum with an ultra-low current shutdown mode. Normal operation resumes

when a button is pressed. This activates the crystal oscillator circuit that serves as the

clock for the AVR microcontroller.

The RF carrier is synthesized utilizing an on-board Voltage Controlled Oscillator (VCO).

Optimal tuning of the VCO is maintained over component tolerance through the use of a

software-controlled switched capacitor array. Its accuracy is maintained with a PLL

detector that compares the crystal oscillator to a frequency-scaled version (divided by

24) of the RF carrier. The resulting error signal adjusts the VCO to produce a very stable

RF carrier.

An interrupt-based bit-timer structure, integral to the AVR microcontroller, simplifies the

implementation of user-specific, data-bit encoding routines, such as PWM or Manches-

ter, for modulating the RF carrier. Thirty-six dB of RF power output control is available to

the user in 1 dB steps and is addressable in software. The RF signal output is placed dif-

ferentially on a tuned-loop antenna, which may be realized as a counterspread copper

trace on a PCB.

The AT86RF401 is fabricated in Atmel’s 0.6 µm Mixed Signal CMOS + EEPROM pro-

cess, enabling true system-level integration (SLI).

Figure 2. 20-lead TSSOP

ANTB

LOOPFIL

RESETB

N/C

I/O0 (SDI)

I/O1 (SDO)

I/O2 (SCK)

XTAL/CLK

ANT

N/C

AVDD

DVDD

AGND

DGND

I/O5

I/O4

I/O3

XTALB

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