M246

1-2 Drain

4-5 Gate

3 Source

1

2

5

4

3

Features

Order code

FREQ

VDD

POUT (typ.)

Gain

ND

ST50V10200

1000 MHz

50 V

200 W

18 dB

60%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Large positive and negative gate/source voltage range

•

In compliance with the European Directive 2002/95/EC

Applications

•

Broadband communications

•

Industrial, scientific and medical (ISM)

•

Avionics

Description

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-

effect RF power transistor designed for broadband commercial, avionics and

industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C

classes for all typical modulation formats.

Product status link

ST50V10200

Product summary

Order code

ST50V10200

Marking

ST50V10200 ES

Package

M246

Packing

TBD

RF power LDMOS transistor for frequencies up to 1.5 GHz

ST50V10200

Datasheet

DS12765 - Rev 2 - March 2019

For further information contact your local STMicroelectronics sales office.

www.st.com