NC

K

A

TO-247

NC

K

A

Features

•

No or negligible reverse recovery

•

Temperature independent switching behavior

•

High forward surge capability

•

Operating Tj from -40 °C to 175 °C

•

Power efficient product

•

ECOPACK®2 compliant

Applications

•

DC/DC converter

•

High frequency inverter

•

Boost PFC function

Description

The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It

is manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode, packaged in

TO-247, will boost the performance in hard switching conditions. Its high forward

surge capability ensures a good robustness during transient phases.

Product status link

STPSC16H065A

Product summary

IF(AV)

16 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.56 V

Product label

650 V power Schottky silicon carbide rectifier

STPSC16H065A

Datasheet

DS12768 - Rev 1 - October 2018

For further information contact your local STMicroelectronics sales office.

www.st.com