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STPSC16H065A Datasheet(PDF) 2 Page - STMicroelectronics |
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STPSC16H065A Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage Tj = -40 °C to +175 °C 650 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current Tc = 115 °C(1), DC current 16 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 120 A tp = 10 ms sinusoidal, Tc = 125 °C 105 tp = 10 µs square, Tc = 25 °C 800 IFRM Repetitive peak forward current Tc = 115 °C(1), Tj = 175 °C, δ = 0.1 66 A Tstg Storage temperature range -55 to +175 °C Tj Operating junction temperature -40 to +175 °C 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Symbol Parameter Value Unit Typ. Max. Rth(j-c) Junction to case 0.95 1.5 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 12 140 µA Tj = 150 °C - 120 560 VF(2) Forward voltage drop Tj = 25 °C IF = 16 A - 1.56 1.75 V Tj = 150 °C - 1.98 2.50 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) + 0.07 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode STPSC16H065A Characteristics DS12768 - Rev 1 page 2/9 |
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