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SH68N65DM6AG Datasheet(PDF) 2 Page - STMicroelectronics

Part # SH68N65DM6AG
Description  Automotive-grade N-channel 650 V, 35 m typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SH68N65DM6AG Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
64
A
ID
Drain current (continuous) at TC = 100 °C
40
A
IDM (1)
Drain current (pulsed)
280
A
PTOT
Total power dissipation at TC = 25 °C
379
W
dv/dt (2)
Peak diode recovery voltage slope
100
V/ns
di/dt (2)
Peak diode recovery current slope
1000
A/μs
dv/dt (3)
MOSFET dv/dt ruggedness
100
V/ns
VISO
Isolation withstand voltage applied between each pin and heat sink plate
(AC voltage (50/60 Hz, t = 60 s)
3.4
kVrms
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
°C
1. Pulse width limited by safe operating area.
2. ISD ≤ 64 A, VDS (peak) < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 520 V.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case
0.33
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (tp limited by TJ max)
9
A
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR)
1.9
J
SH68N65DM6AG
Electrical ratings
DS14027 - Rev 1
page 2/15



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