STB30N65M2AG datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS = 650 V, TC = 125 °C (1)

100

µA

IGSS

Gate-body leakage current

VGS = ±25 V, VDS = 0 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 10 A

0.15

0.18

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

1440

Coss

Output capacitance

Crss

Reverse transfer capacitance

0.5

Coss eq (1)

Equivalent capacitance time

VDS = 0 to 520 V, VGS = 0 V

307

Intrinsic gate resistance

f = 1 MHz open drain

4.9

Total gate charge

VDD = 520 V, ID = 20 A, VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

30.8

Qgs

Gate-source charge

6.8

Qgd

Gate-drain charge

10.2

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for resistive

load switching times and

Figure 18. Switching time waveform)

Rise time

td(off)

Turn-off delay time

Fall time

STB30N65M2AG

Electrical characteristics

DS12263 - Rev 2

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