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STB30N65M2AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STB30N65M2AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() 1 3 TAB D²PAK 2 D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. ID STB30N65M2AG 650 V 0.18 Ω 20 A • AEC-Q101 qualified • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB30N65M2AG Product summary Order code STB30N65M2AG Marking 30N65M2 Package D²PAK Packing Tape and reel Automotive-grade N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a D²PAK package STB30N65M2AG Datasheet DS12263 - Rev 2 - December 2019 For further information contact your local STMicroelectronics sales office. www.st.com |
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