ACS1026T datasheet(2/11 Pages) STMICROELECTRONICS

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1 Characteristics

ACS102-6T

2/11

Characteristics

Table 1.

Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified)

Table 2.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

IT(RMS) RMS on-state current (full sine wave)

TO-92

Tamb = 100 °C

0.2

SO-08

Tamb = 100 °C

ITSM

Non repetitive surge peak on-state current

(full cycle sine wave, Tj initial = 25 °C)

f = 60 Hz

t = 16.7 ms

7.6

f = 50 Hz

t = 20 ms

7.3

I²t

I²t Value for fusing

tp = 10 ms

0.38

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2xIGT, tr ≤ 100 ns

f = 120 Hz

Tj = 125 °C

A/µs

VPP

Non repetitive line peak mains voltage(1)

according to test described by IEC 61000-4-5 standard and Figure 16

Tj = 25 °C

2kV

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

VGM

Peak positive gate voltage

Tj = 125 °C

PG(AV) Average gate power dissipation

Tj = 125 °C

0.1

Tstg

Storage junction temperature range

Operating junction temperature range

-40 to +150

-30 to +125

°C

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

minimum IGT is guaranteed at 10% of IGT max

VOUT = 12 V, RL = 33 Ω

II - III

MAX

VGT

II - III

MAX

0.9

VGD

VOUT = VDRM, RL =3.3 kΩ, Tj = 125 °C

II - III

MIN

0.15

(2)

for both polarities of OUT referenced to COM

IOUT = 100 mA

MAX

(2)

IG = 1.2 x IGT

MAX

dV/dt (2)

VOUT = 67% VDRM, gate open, Tj = 125 °C

MIN

300

V/µs

(dI/dt)c (2)

Without snubber (15 V/µs), turn-off time

≤ 20 ms, Tj = 125 °C

MIN

0.15

A/ms

VCL

ICL = 0.1 mA, tp = 1 ms, Tj = 125 °C

MIN

650

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