STL38DN6F7AG datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STL38DN6F7AG

Description	Automotive-grade N-channel 60 V, 24 m typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 15 page

NG14G22D1D2RSS13S21

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Drain on rear side

Features

Order code

VDS

RDS(on) max.

ID

STL38DN6F7AG

60 V

27 mΩ

10 A

•

AEC-Q101 qualified

•

Among the lowest RDS(on) on the market

•

Excellent FoM (figure of merit)

•

Low Crss/Ciss ratio for EMI immunity

•

High avalanche ruggedness

Applications

•

Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an

enhanced trench gate structure that results in very low on-state resistance, while also

reducing internal capacitance and gate charge for faster and more efficient switching.

Product status

STL38DN6F7AG

Device summary

Order code

STL38DN6F7AG

Marking

38DN6F7

Package

PowerFLAT™ 5x6

double island

Packing

Tape and reel

Automotive-grade N-channel 60 V, 24 mΩ typ., 10 A STripFET™ F7

Power MOSFET in a PowerFLAT™ 5x6 double island package

STL38DN6F7AG

Datasheet

DS12506 - Rev 1 - March 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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STL38DN6F7AG Datasheet(PDF) 1 Page - STMicroelectronics

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