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STL52DN4LF7AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STL52DN4LF7AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() December 2017 DocID029278 Rev 4 1/16 This is information on a product in full production. www.st.com STL52DN4LF7AG Automotive-grade dual N- channel 40 V, 9 mΩ typ., 18 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STL52DN4LF7AG 40 V 16 mΩ 18 A AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL52DN4LF7AG 52DN4LF7 PowerFLAT™ 5x6 double island Tape and reel |
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