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STL52DN4LF7AG Datasheet(PDF) 3 Page - STMicroelectronics |
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STL52DN4LF7AG Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STL52DN4LF7AG Electrical ratings DocID029278 Rev 4 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 18 A ID(1) Drain current (continuous) at Tc = 100 °C 18 A IDM(1)(2) Drain current (pulsed) 72 A PTOT Total dissipation at TC = 25 °C 65 W Tstg Storage temperature range -55 to 175 °C TJ Operation junction temperature range Notes: (1)Drain current is limited by package, the current capability of the silicon is 46 A at 25 °C and 33 A at 100 °C. (2)Pulse width limited by safe operating area Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.3 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 32 Notes: (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s |
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