STL9P4LF6AG datasheet(3/12 Pages) STMICROELECTRONICS

Part #	STL9P4LF6AG

Description	Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = -250 µA

-40

IDSS

Zero gate voltage Drain current

VGS = 0 V, VDS = -40 V

-1

µA

VGS = 0 V, VDS = -40 V, TC = 125 °C

-10

IGSS

Gate-body leakage current

VDS = 0 V, VGS = -18 V

-100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

-1

-2.5

RDS(on)

Static drain-source on-resistance

VGS = -10 V, ID = -4 A

mΩ

VGS = -4.5 V, ID = -4 A

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -25 V, f = 1 MHz, VGS = 0 V

2540

Coss

Output capacitance

254

Crss

Reverse transfer capacitance

173

Total gate charge

VDS = -20 V, ID = -8 A, VGS = -4.5 V

(see Figure 13. Gate charge test circuit)

Qgs

Gate-source change

VDD = -20 V, ID = -8 A, VGS = -4.5 V

6.8

Qgd

Gate-drain change

VDD = -20 V, ID = -8 A, VGS = -4.5 V

7.8

STL9P4LF6AG

Electrical characteristics

DS13399 - Rev 2

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