STGIPQ5C60T-HLS datasheet(7/27 Pages) STMICROELECTRONICS

7 / 27 page

Electrical characteristics

TJ = 25 °C unless otherwise noted.

3.1

Inverter part

Table 6. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VIN = 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

250

μA

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN(1) = 0 to 5 V,

IC = 5 A

1.7

2.15

Diode forward voltage

VIN = 0 “logic state”, IC = 5 A

2.1

1. Applied among HINx, LINx and GND for x = U, V, W

Table 7. Inductive load switching time and energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ton(1)

Turn-on time

VDD = 300 V,VCC = Vboot = 15 V,

VIN(2) = 0 to 5 V, IC = 5 A

(see Figure 5. Switching time definition)

280

tc(on)(1)

Crossover time (on)

130

toff(1)

Turn-off time

950

tc(off)(1)

Crossover time (off)

115

trr

Reverse recovery time

Eon

Turn-on switching energy

110

µJ

Eoff

Turn-off switching energy

1. tON and tOFF include the propagation delay times of the internal drive. tC(ON) and tC(OFF) are the switching times of IGBT

itself under the internally given gate driving conditions.

2. Applied among HINx, LINx and GND for x = U, V, W.

STGIPQ5C60T-HLS, STGIPQ5C60T-HZS

Electrical characteristics

DS11420 - Rev 5

page 7/27

STGIPQ5C60T-HLS Datasheet(PDF) 7 Page - STMicroelectronics

STGIPQ5C60T-HLS Datasheet(HTML) 7 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

Datasheet Download

Link URL