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STP20N60M2-EP Datasheet(PDF) 6 Page - STMicroelectronics |
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STP20N60M2-EP Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Figure 7. Capacitance variations GIPG210120161637CVR 1000 100 10 1 0.1 1 10 100 C (pF) VDS (V) Ci ss Coss Crss Figure 8. Output capacitance stored energy GIPG210120161026EOS 6 5 4 3 2 1 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) Figure 9. Normalized on-resistance vs temperature GIPG020220161245RON 2.2 1.8 1.4 1.0 0.6 0.2 -75 -25 25 75 125 RDS(on) (norm.) Tj (°C) VGS = 10 V Figure 10. Normalized gate threshold voltage vs temperature GIPG020220161244VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) Tj (°C) ID= 250 µA Figure 11. Normalized V(BR)DSS vs temperature GIPG020220161300BDV 1.08 1.04 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) Tj (°C) ID = 1 mA 1.00 Figure 12. Source-drain diode forward characteristics GIPG210120161002SDF 1.1 1 0.9 0.8 0.7 0.6 0.5 0 2 4 6 8 10 12 VSD (V) ISD (A) TJ = -50 °C TJ = 25 °C TJ = 150 °C STP20N60M2-EP Electrical characteristics (curves) DS11505 - Rev 3 page 6/14 |
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