STP20N60M2-EP datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STP20N60M2-EP

Description	N-channel 600 V, 0.230 typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-220 package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 14 page

1

2

3

TO-220

TAB

D(2, TAB)

G(1)

S(3)

AM01475V1

Features

Order code

VDS

RDS(on) max.

ID

STB20N60M2-EP

600 V

0.278 Ω

13 A

•

Extremely low gate charge

•

Excellent output capacitance (COSS) profile

•

Very low turn-off switching losses

•

100% avalanche tested

•

Zener-protected

Applications

•

Switching applications

•

Tailored for very high frequency converters (f > 150 kHz)

Description

This device is an N-channel Power MOSFET developed using MDmesh™

M2 enhanced performance (EP) technology. Thanks to its strip layout and an

improved vertical structure, the device exhibits low on-resistance, optimized switching

characteristics with very low turn-off switching losses, rendering it suitable for the

most demanding very high frequency converters.

Product status link

STP20N60M2-EP

Product summary

Order code

STP20N60M2-EP

Marking

20N60M2EP

Package

TO-220

Packing

Tube

N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP

Power MOSFET in a TO-220 package

STP20N60M2-EP

DS11505 - Rev 3 - June 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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STP20N60M2-EP Datasheet(PDF) 1 Page - STMicroelectronics

STP20N60M2-EP Datasheet(HTML) 1 Page - STMicroelectronics

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