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STP36N60M6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP36N60M6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() March 2017 DocID028429 Rev 3 1/16 This is information on a product in full production. www.st.com STP36N60M6, STW36N60M6 N- channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STP36N60M6 600 V 99 m Ω 30 A STW36N60M6 Reduced switching losses Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. Table 1: Device summary Order code Marking Package Packaging STP36N60M6 36N60M6 TO-220 Tube STW36N60M6 TO-247 1 2 3 TO-247 1 2 3 TAB TO-220 |
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