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STWA72N60DM2AG Datasheet(PDF) 6 Page - STMicroelectronics |
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STWA72N60DM2AG Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 13 page ![]() Figure 7. Capacitance variations GIPG100415FQ69WCVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) V DS (V) C ISS C OSS C RSS f = 1 MHz Figure 8. Normalized gate threshold voltage vs temperature GIPG100415FQ69WVGS 1.10 1.00 0.90 0.80 0.70 0.60 -75 -25 25 75 125 V GS(th) (norm.) T j (°C) I D = 250 μA Figure 9. Normalized on-resistance vs temperature GIPG100415FQ69WRON 2.2 1.8 1.4 1.0 0.6 0.2 -75 -25 25 75 125 R DS(on) (norm.) T j (°C) V GS = 10 V I D = 33 A Figure 10. Normalized V(BR)DSS vs temperature GIPG100415FQ69WBDV 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 V (BR)DSS (norm.) T j (°C) I D = 1 mA Figure 11. Output capacitance stored energy GIPG100415FQ69WEOS 32 24 16 8 0 0 100 200 300 400 500 600 E OSS (μJ) V DS (V) Figure 12. Source- drain diode forward characteristics GIPG180520151147SDF 1 0.9 0.8 0.7 0.6 0.5 0 10 20 30 40 50 60 V SD (V) I SD (A) T j = -50 °C T j = 25 °C T j = 150 °C STWA72N60DM2AG Electrical characteristics (curves) DS12726 - Rev 1 page 6/13 |
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