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STF11N60M2-EP Datasheet(PDF) 1 Page - STMicroelectronics |
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STF11N60M2-EP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Features Order code VDS RDS(on) max. ID STF11N60M2-EP 600 V 0.595 Ω 7.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STF11N60M2-EP Product summary Order code STF11N60M2-EP Marking 11N60M2EP Package TO-220FP Packing Tube N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package STF11N60M2-EP Datasheet DS11598 - Rev 4 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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